Quantum transport in a single molecular transistor at finite temperature

Abstract We study quantum transport in a single molecular transistor which the central region consists of single-level dot and is connected to two metallic leads that act as source drain respectively. The considered be under influence electron–electron electron–phonon interactions. placed on an insulating substrate acts heat reservoir interacts with phonon giving rise damping effect dot. interaction decoupled by applying canonical transformation then spectral density calculated from resultant Hamiltonian using Keldysh Green function technique. also calculate tunneling current differential conductance dissipation, electron correlation lattice effects at finite temperature.